RECOMBINATION PC1D FREE

For solar cells in particular, both open circuit voltage ( V oc) and photogenerated current density ( J L) depend on minority carrier mobility and effective carrier lifetime in the absorber material 7. Knowledge of intrinsic carrier concentration, effective equilibrium minority carrier concentration, minority carrier mobility, and effective carrier lifetime obtained by theoretical and experimental methods are essential parameters for modeling semiconductor devices to understand device physics and to optimize performance 1, 2, 3, 4, 5, 6. Minority carrier transport parameters critically affect operation and performance of many p-n junction semiconductor devices including bipolar transistors and solar cells 1, 2, 3, 4. To the best of our knowledge, this is the first method that enables determination of both minority and majority carrier transport parameters in both active layers of the p-n junction in a complete solar cell. The calculated device performance parameters are found to be consistent with direct current-voltage measurement demonstrating the validity of this technique for electrical transport property measurements of the semiconducting layers in complete Si solar cells. Solar cell device performance parameters including photovoltaic device efficiency, open circuit voltage, fill factor, and short circuit current density are also calculated from these transport parameters obtained via optical Hall effect using the diode equation and PC1D solar cell simulations. Using the dark majority carrier concentration and the effective equilibrium minority carrier concentration under 1 sun illumination, minority carrier effective lifetime and diffusion length are calculated in the n-type emitter and p-type wafer Si with the results also being consistent with literature. Photogenerated minority carrier concentrations are, and minority carrier mobilities are, for the -type Si, respectively, values that are within expectations from literature.

From analysis of combined dark and light optical Hall effect measurements, photogenerated minority carrier transport parameters under 1 sun illumination for both n- and p-type Si components of the solar cell are determined. Contributions from photogenerated carriers in both regions of the p-n junction are obtained from measurements of the solar cell under вЂњlightвЂќ 1 sun illumination (AM1.5 solar irradiance spectrum). All values are within expectations for this device design. From measurements under 0 and в‘.48вЂ‰T external magnetic fields and nominally вЂњdarkвЂќ conditions, the following respective -type Si parameters are obtained: NвЂ‰=вЂ‰ ОјвЂ‰=вЂ‰ and m*вЂ‰=вЂ‰. Majority carrier transport parameters are determined for both the n-type emitter and p-type bulk wafer Si of an industrially produced aluminum back surface field (Al-BSF) photovoltaic device.

RECOMBINATION PC1D FREE

Electrical transport parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optical absorption using non-contacting optical Hall effect measurements.

Recombination pc1d